What are you looking for ?
Infinidat
Articles_top

Seagate Assigned Two Patents

Partition selection circuitry, multilayer hard magnet and storage device R/W head

Method and storage system for providing multiple partition support
Seagate Technology LLC
, Cupertino, CA, has been assigned a patent (8,607,021) developed by five co-inventors for method and storage system “for providing multiple partition support.”

The co-inventors are YongPeng Chng, LianYong Tan, YamPheng Tham, HuaYuan Chen, and Wesley WingHung Chan, Singapore.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An apparatus of the present invention includes partition selection circuitry configured to selectably provide individual access to multiple ones of a plurality of partitions of a data storage component by a host device without multiple partition support. The apparatus can also include the data storage component and/or the host device. The partition selection circuitry uses a logical block addressing (LBA) address generated by the host device, and an operating mode indicator indicative of a particular partition, to allow the partitions of the data storage component to be accessed by the host device without multiple partition support. Methods implemented by the apparatus are also disclosed.

The patent application was filed on June 29, 2012 (13/538,479).

Multilayer hard magnet and data storage device read/write head incorporating the same
Seagate Technology, Cupertino, CA, has been assigned a patent (8,632,897) developed by five co-inventors for “multilayer hard magnet and data storage device read/write head incorporating the same.

The co-inventors are Shaun Eric McKinlay, Eden Prairie, Minn., Yonghua Chen, Edina, MN, Eric Walter Singleton, Maple Plain, MN, Hua Yuan, Milpitas, CA, and Jiaoming Qiu, St. Paul, MN.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A hard magnet may include a seed layer including a first component including at least one of a Pt-group metal, Fe, Mn, and Co, a cap layer comprising the first component, and a multilayer stack between the seed layer and the cap layer. In some embodiments, the multilayer stack may include a first layer of including the first component and a second component including at least one of a Pt-group metal, Fe, Mn, and Co, where the second component is different than the first component. The multilayer stack may further include a second layer formed over the first layer and including the second component, and a third layer formed over the second layer and including the first component and the second component.”

The patent application was filed on Oct. 28, 2009 (12/607,897).

Articles_bottom
AIC
ATTO
OPEN-E