Toshiba Will Expand 3D Flash Memory Production Capacity

Toshiba Corporation announced the outline schedule for the construction of a facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory¹.

Fab5 at Toshiba Yokkaichi Operation

Following on from the March announcement of its intention to build a new BiCS FLASH facility, the company decided to start construction in February 2017. The Fab will be dedicated to 3D Flash memory processes. Like Fab 5, it will be constructed in two phases, to optimize the pace of investment against market trends, with completion of the first phase targeting summer 2018.

Toshiba also plans to construct a building adjacent to the new Fab, the Memory R&D Center. This will bring together research development activities carried out in different locations, a move that will promote flash memories development.

Decisions on the new fab’s overall capacity and equipment investment, the start of production, production capacity and production plan will reflect market trends. Toshiba expects to continue its joint investments in and operations of the flash joint venture based on discussion with Western Digital Corporation in the facility.

The fab will have a quake absorbing structure and an environmentally friendly design that includes LED lighting throughout the building, plus energy saving manufacturing equipment. It will also introduce a production system that uses artificial intelligence (AI) to boost productivity.

Going forward, Toshiba will expand its memory business and boost competitiveness by timely investments responding to market needs, and by development of BiCS FLASH and new generation memories.

¹ A structure that stack flash memory cells on a silicon substrate. It realizes significant density improvements over planar NAND Flash memory, where cells are formed on the silicon substrate.

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