Renesas With 40nm Embedded Flash Technology IP

Renesas Electronics Corporation, supplier of semiconductor solutions, with expertise in flash design, has developed the first 40nm memory IP for automotive real-time applications.

Renesas will also be the first to launch 40nm embedded flash microcontrollers (MCUs) for automotive applications using this 40nm flash technology with samples available by the beginning of autumn 2012.

Renesas has experience in developing flash MONOS (metal oxide nitride oxide silicon) technology with high quality and reliability. Renesas was notably also the first to launch the 90nm automotive flash MCU products in 2007.

Renesas flash MONOS technology is scalable while providing both reliability and performance. Evaluation results available from 40nm flash test devices prove that excellent characteristics for three critical parameters (data retention, program/erase cycle endurance and programming time) have been achieved successfully. The 40nm process node enables integration of several functional safety-related and communication interface.

The 40nm flash memory IP guarantees 20 years of data retention, and can be read from up to 170°C junction temperature. Additionally, the code flash supports read speed of 120MHz, and the data flash achieves data-retention period of 20 years after 125,000 of program/erase cycles.