Regents of University of Michigan Assigned Patent

The Regents Of The University of Michigan, Ann Arbor, MI, has been assigned a patent (9,627,042) developed by Mazumder, Pinaki, Kim, Jaeyoung, and Zheng, Nan, Ann Arbor, MI, for a “static random access memory cell having improved write margin for use in ultra-low power application.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A static random access memory, (SRAM) cell is provided with improved write margin. The SRAM cell includes: a pair of inverters cross coupled to each other and forming two storage nodes, read access switches electrically coupled between a read bit line and the two storage nodes, write access switches electrically coupled between write bit lines and two storage nodes, and supply switches electrically coupled between a supply voltage and the pair of inverters and operable, in response to a signal on at least one of the write bit lines, to selectively connect the supply voltage to at least one of the inverters in the pair of inverters. During a write operation, the supply switches operate to cut off the supply voltage to the inverter in the pair of inverters having a charged state.“

The patent application was filed on December 30, 2013 (15/033,456).