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Institute of Microelectronics/Chinese Academy of Sciences Assigned Patent

Vertical channel-type 3D semiconductor memory

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, has been assigned a patent (9,613,981) developed by Huo, Zongliang, and Liu, Ming, Beijing, China, for a “vertical channel-type 3D semiconductor memory device and method for manufacturing the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A vertical channel-type 3D semiconductor memory device and a method for manufacturing the same are disclosed. In one aspect, the method includes depositing alternating insulating and electrode layers on a substrate to form a multi-layer film. The method further includes etching the film to the substrate to form through-holes, each of which defines a channel region. The method further includes depositing barrier, storage, and tunnel layers in sequence on inner walls of through-holes to form gate stacks. The method further includes depositing and incompletely filling a channel material on a surface of the tunnel layer of gate stacks to form a hollow channels. The method further includes forming drains in contact hole regions for bit-line connection in top portions of the hollow channels. The method further includes forming sources in contact regions between the through-holes and the substrate in bottom portions of the hollow channels.

The patent application was filed on July 19, 2016 (15/214,372).

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