Crocus Assigned Patent
Self-referenced MRAM cell that can be read with reduced power consumption
By Francis Pelletier | April 25, 2017 at 2:39 pmCrocus Technology SA, Grenoble, France, has been assigned a patent (9,620,187) developed by Stainer, Quentin, Grenoble, France, for a “self-referenced MRAM cell that can be read with reduced power consumption.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “Self-referenced magnetic random access memory, (MRAM) cell including a magnetic tunnel junction including a sense layer, a storage layer having a storage magnetization, a tunnel barrier layer between the sense and the storage layers, and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer includes a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers. The MRAM cell can be read with low power consumption.“
The patent application was filed on February 21, 2014 (14/772,916).
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