United Microelectronics Assigned Patent

United Microelectronics Corp., Hsinchu, Taiwan, has been assigned a patent (9,589,977) developed by Chen, Ko-Chi, Taoyuan, Taiwan, and Wang, Shen-De, Hsinchu County, Taiwan, for a “non-volatile memory and fabricating method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The invention provides a non-volatile memory and a fabricating method thereof. The non-volatile memory includes a substrate, an embedded-type charge storage transistor, and a selection transistor. The substrate has an opening. The embedded-type charge storage transistor is disposed in the substrate. The embedded-type charge storage transistor includes a charge storage structure and a conductive layer. The charge storage structure is disposed on the substrate in the opening. The conductive layer is disposed on the charge storage structure and fills the opening. The selection transistor is disposed on the substrate at one side of the embedded-type charge storage transistor, wherein the selection transistor includes a metal gate structure. The non-volatile memory has excellent charge storage capacity.“

The patent application was filed on December 9, 2015 (14/963,833).