Crocus Technology Assigned Patent

Crocus Technology SA, Grenoble, France, has been assigned a patent (9,548,094) developed by Cambou, Bertrand, Palo Alto, CA, for a “magnetic random access memory cell with a dual junction for ternary content addressable memory applications.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory, (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.“

The patent application was filed on June 23, 2016 (15/190,499).